Springer Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride (Springer Theses)

This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose. From the Back Cover This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose. About the Author Roland Tay received his B.Eng. and Ph.D. in Electrical and Electronic Engineering (EEE) from Nanyang Technological University (NTU) in 2009 and 2016 respectively. He was a semiconductor process integration engineer in Gobalfoundaries in 2009 and joined Temasek Laboratories@NTU to pursue his Ph.D. under the Technology Development Programme (TDP) in 2012. He is currently a research fellow at Royal Melbourne Institute of Technology (RMIT) University under the Australian Research Council (ARC) fellowship. His research interest is focused in the area of low-dimensional boron nitride nanostructures, their synthesis methodologies and advanced characterization techniques.