Springer Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

Product Description This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.  From the Back Cover This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices. About the Author Dr. Arjun Mandal is currently working as a Research Associate at the University of Wisconsin-Madison, USA. His current work involves GaAs based Hydride Vapor Phase Epitaxy (HVPE) synthesis of lattice-mismatched “virtual substrates”, and materials synthesis for advanced Quantum Cascade Laser (QCL) development. He also works on modeling of vapor phase epitaxy growths using computational fluid dynamics. Previously, he worked at the Semiconductor Materials and Processes Laboratory (SMPL) at Chonbuk National University, South Korea. During this period, his research works included growth and characterizations of InGaN/GaN quantum dots and multi quantum well (MQW) heterostructures on GaN nanowires for LED device applications. For this purpose, growths were done with nitride based MOCVD system. Also, He had worked on GaN nanowire-graphene based hybrid structures for ultraviolet photoconductive device applications. Prior to joining SMPL, he had spent six months in the Electrical Engineering Department, IIT Bombay as a Research Associate from where he completed his Ph.D. in 2014 in Microelectronics; he received his M. Tech. from Institute of Radiophysics and Electronics, University of Calcutta in 2008. The topic of his doctoral research was effect of ion implantation on the In(Ga)As/GaAs base