Semiconductor Interfaces at the Sub-Nanometer Scale: 243 (NATO Science Series E:) - Image 1

£145.66

Springer Semiconductor Interfaces at the Sub-Nanometer Scale: 243 (NATO Science Series E:)

Name: Semiconductor Interfaces at the Sub-Nanometer Scale: 243 (NATO Science Series E:)
Brand: Springer
Price: 145.66 GBP
Availability: InStock

Physical Chemistry

This is the most expensive it has ever been. Walk away.

£146 today · previous high £146 · all-time low £144

NEW HERE?

Amazon shows you one price. We show you all of them.

Tosheroon watches Amazon prices so you don't have to. Every product on Amazon has a price history — we make it visible. Set the price you'd actually pay, and we'll email you the second it gets there. No app, no account, one email.

WHAT'S ON THIS PAGE

↓ Price chart
when this has been cheap or pricey

↓ Forecast
where the price is heading next

↓ Statistics
all-time high & low, recent range

↑ Price alert
name your number, we'll email you

Price History & Forecast

Grey patches = out of stock. Cheaper = lower on the chart. Hover for exact prices.

Last 48 days • 48 data points (No recent data available)

Historical

Generating forecast...

Price Distribution

Price distribution over 48 days • 2 price levels

Days at Price

Current Price

Price Analysis

Most common price: £144 (47 days, 97.9%)

Price range: £144 - £146

Price levels: 2 different prices over 48 days

Description

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Product Specifications

Brand: Springer
Format: paperback
ASIN: 9401049009
Category: Books > Subjects > Science, Nature & Maths > Chemistry > Physical Chemistry
Domain: Amazon UK
Publication Date: 27 September 2012
Listed Since: 20 September 2013

Barcode

No barcode data available

Springer Semiconductor Interfaces at the Sub-Nanometer Scale: 243 (NATO Science Series E:)

This is the most expensive it has ever been. Walk away.

Price History & Forecast

Price Distribution

Price Analysis

Description

Product Specifications

Barcode

Similar Products You Might Like

Leading-Edge Semiconductor Research - Nova Science Publishers

New Developments in Semiconductor Research

Trends in Semiconductor Research

Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates: 298 (NATO Science Series E:, 298)

Frontal Semiconductor Research

Advances in Infrared Photodetectors: 84 (Semiconductors and Semimetals): Volume 84

New Research on Semiconductors - Nova Science Publishers Inc

Physics of Semiconductors 2002: Proceedings of the 26th International Conference, Edinburgh, 29 July to 2 August 2002: 1 (Institute of Physics Conference Series)

Heterostructure Epitaxy and Devices - HEAD’97: 48 (NATO Science Partnership Subseries: 3, 48)

Semiconductors and Semimetals: Biomolecular Systems: Volume 83 (Semiconductors and Semimetals, Volume 83)

Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition

Elsevier Molecular Beam Epitaxy: From Research to Mass Production

Heterostructure Epitaxy and Devices - HEAD’97: 48 (NATO Science Partnership Subseries: 3, 48)

Quantum Efficiency in Complex Systems, Part II: From Molecular Aggregates to Organic Solar Cells: Organic Solar Cells (Semiconductors and Semimetals): Volume 85

Elsevier Molecular Beam Epitaxy: Research to Mass Production

Single Crystal Growth of Semiconductors From Metallic Solutions

Molecular Beam Epitaxy: Fundamentals and Current Status: 7 (Springer Series in Materials Science, 7)

Gallium-Nitride (GaN) II (Volume 57) (Semiconductors and Semimetals, Volume 57)

Two-Dimensional Semiconductors: Synthesis, Physical Properties and Applications

Low-Dimensional Structures in Semiconductors: From Basic Physics to Applications: 281 (NATO Science Series B:, 281)

Wiley Electronic Materials Science - Advanced Science Textbook

Science and Engineering of One- and Zero-Dimensional Semiconductors: 214 (NATO Science Series B:, 214)

Dilute Nitride Semiconductors

Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures (Graduate Texts in Physics)