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ASP Editions Epitaxial Growth of Nitrides on Germanium

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Description

A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates—and solid phase epitaxy of germanium on silicon substrates—this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.

Product Specifications

Format
paperback
Domain
Amazon UK
Release Date
01 September 2009
Listed Since
20 March 2009

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