Springer Low-Frequency Noise in Advanced MOS Devices (Analog Circuits and Signal Processing)

Product Description This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits. From the Back Cover Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits. About the Author The Book will be based on the following work which also is the publication list for Dr Martin von Haartman; Ph. D. Thesis: Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors, xx, 124 pages, 9 appended papers, Stockholm, April 2006. http://www.diva-portal.org/kth/theses/abstract.xsql?dbid=3888 Journals: M. von Haartman, D. Wu, B. G. Malm, P.-E. Hellström, S.-L. Zhang and M. Östling, "Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics", Solid-State Electronics, vol. 48, pp. 2271-2275, 2004. D. Wu, M. von Haartman, J. Seger, E. Tois, M. Tuominen, P.-E. Hellström, M. Östling, S.-L. Zhang, "Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack", Microelectron Eng., vol. 77, pp. 36-41, 2005. M. von Haartman, J. Westlinder, D. Wu, B. G. Malm, P.-E. Hellström, J. Olsson, S.-L. Zhang, M. Östling, "Investigation of low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics", Solid-State Electronics, vol. 49, pp. 907-914, 2005. J. Seger, P.-E. Hellström, J. Lu, B. G. Malm, M. von Haartman, M. Östling, and S.-L. Zhang, "Lateral enroachment of Ni-silicide in the source/drain regions on ultra-thin silicon-on-insulator", Appl. Phys. Lett., vol. 86, 253507, 2005. C. Isheden, P.-E. Hellström, M. von Haartman, H. H. Radamson, and M. Östling, "pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions", Mat. Sci. Sem. Proc., vol. 8, pp. 359-362, 2005. M. von Haartman, B. G. Malm, and M. Östling, "A comprehensive study on Low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gate", IEEE Trans. Electron Devices, vol. 53, pp. 836-843, April 2006. J. Hållstedt, M. von Haartman, P.-E. Hellström, M. Östling, and H. H. Radamson, "Hole mobility in ultra thin body SOI pMOSFETs with buried SiGe or SiGeC channels", accepted for publication in IEEE Electron Device Letters. International conferences: M. von Haartman, J. Hållstedt, J. Seger, B. G. Malm, H. H. Radamson, P.-E. Hellström, and M. Östling, "Low-frequency noise in SiGe channel pMOSFETs on ultra-thin SOI with Ni-silicided Source/Drain", in Proc. 18th Int. Conf. Noise and Fluctuations (ICNF), 2005, pp. 307-310. M. von Haartman, B. G. Malm, P.-E. Hellström, and M. Östling, "Noise in Si-based MOSFETs with high-k gate dielectrics",