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LAP Lambert Academic Publishing Study of Atomic Layer Deposited HfO2/Si Interfaces: For their Quality Reliability and Radiation based Interface Modifications

Name: Study of Atomic Layer Deposited HfO2/Si Interfaces: For their Quality Reliability and Radiation based Interface Modifications
Brand: LAP Lambert Academic Publishing
Price: 56.0 GBP
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Electronics Engineering

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To continue scaling of MOS devices, SiO2 has to be replaced by high-K dielectric material. HfO2 is one of the prime materials with high dielectric constant has the potential to replace SiO2. HfO2 has been extensively studied by a number of authors. Still there are a number of issues that need to be addressed before to further scale down HfO2 based MOS devices. This book presents the studies done with HfO2 for future MOS device applications.

Product Specifications

Brand: LAP Lambert Academic Publishing
Format: paperback
ASIN: 6139909503
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electronics & Communications Engineering > Electronics Engineering
Domain: Amazon UK
Release Date: 01 August 2019
Listed Since: 25 August 2019

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LAP Lambert Academic Publishing Study of Atomic Layer Deposited HfO2/Si Interfaces: For their Quality Reliability and Radiation based Interface Modifications

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LAP Lambert Academic Publishing Study of Atomic Layer Deposited HfO2/Si Interfaces: For their Quality Reliability and Radiation based Interface Modifications

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