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OmniScriptum Couplage excitons-lumière dans des hétérostructures en GaN et ZnO: Technique d''analyse des spectres de réflectivité pour détermination des paramètres ... à grand gap (Omn.Univ.Europ.)

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Description

Les semi-conducteurs à grand gap sont utilisés pour fabrication d'émetteurs de lumière dans le domaine spectrale UV-VIS. Matériaux comme GaN et ZnO présentent des propriétés excitoniques spéciales: la force d'oscillateur est élevée et l'énergie de liaison des excitons est grande. Due à l'élargissement inhomogène des excitons assez important dans les hétérostructures, les résonances des excitons sont larges, ce qui rend difficile et imprécise l'extraction de leur paramètres. Ce travail est consacré à l'étude théorique et expérimentale des puits quantiques GaN/AlGaN et ZnO massif, basée sur l'analyse de leurs spectres de réflectivité. Une technique d'analyse originale des spectres de réflectivité expérimentaux a été développée et employée pour la détermination de la force d'oscillateur des excitons dans les structures à base de GaN et ZnO. Les paramètres obtenus ont été utilisés pour proposer des microcavités modèles, réalisées à base de ces matériaux. Grâce au régime de couplage fort exciton-lumière dans ces structures, la condensation de Bose des polaritons dans les microcavités est possible jusqu'à la température ambiante.

Product Specifications

Format
paperback
Domain
Amazon UK
Release Date
27 August 2010
Listed Since
31 August 2010

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