Design of Capacitorless Memory Cell based on GaN Heterostructures: Gallium Nitride Devices - Image 1

£41.00

LAP Lambert Academic Publishing Design of Capacitorless Memory Cell based on GaN Heterostructures: Gallium Nitride Devices

Name: Design of Capacitorless Memory Cell based on GaN Heterostructures: Gallium Nitride Devices
Brand: LAP Lambert Academic Publishing
Price: 41.0 GBP
Availability: InStock

Electronics Engineering

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Product Specifications

Brand: LAP Lambert Academic Publishing
Format: paperback
ASIN: 3659105562
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electronics & Communications Engineering > Electronics Engineering
Domain: Amazon UK
Publication Date: 20 March 2014
Listed Since: 14 April 2014

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LAP Lambert Academic Publishing Design of Capacitorless Memory Cell based on GaN Heterostructures: Gallium Nitride Devices

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