Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics - Image 1

£48.97

VDM Verlag Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

Name: Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics
Brand: VDM Verlag
Price: 48.97 GBP
Availability: InStock

Architecture & Microprocessors

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Description

The book contains experimental information of pseudo-epitaxial growth a series of Al(1-x)In(x)N films with thicknesses ranging from 100 nm to 8000 nm and In concentration (x) ranging from 0 to 1 on different substrates (Si, Sapphire, SiC glass) using Plasma Source Molecular Beam Epitaxy (PSMBE) techniques. Using different growth modes as the specific film morphology, the self-assembled nanostructures were created. The mechanism of carrier confinement in these structures are described. Theoretically and experimentally shown that the electron localization may exist in the nanostructures by piezoelectric field from AlN buffer layer. Optical investigation of the fundamental bandgap Eg of InxAl1-xN in the temperature range 70-700K and compositional range (0

Product Specifications

Brand: VDM Verlag
Format: paperback
ASIN: 3639030281
Category: Books > Subjects > Computing & Internet > Computer Science > Architecture & Microprocessors
Domain: Amazon UK
Release Date: 10 September 2008
Listed Since: 16 September 2008

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VDM Verlag Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

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