CRC Press Nanoscale Silicon Devices

Product Description Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology. Review "This book covers recent trends and technologies of Si nanoscale devices, from cutting-edge transistors to qubits (quantum bits). It is a good book for graduate students and researchers to learn briefly about basic physics and the recent trends of silicon nanoscale devices."―Koji Ishibashi, Advanced Device Laboratory, Riken, Japan "It is remarkable that this book offers a large overview of carrier transport mechanisms and device physics while it is strictly focused on silicon technology. For instance, topics like spintronics, single-electron transfer, spin-based qubits, and nonvolatile magnetoelectronic devices are rarely approached on the point of view of silicon material and technology."―Philippe Dollfus, CNRS – University of Paris-Sud, Orsay, France "The authors put together the hottest topics that the nanoelectronics community is currently debating. … a good reference for researchers and/or educators who are interested in the physical challenges of future electronic devices based on charge, spin transfer, or mechanical actuation and sensing."―Simon Deleonibus, CEA, LETI, France "Very comprehensive book … written with great clarity by world-leading experts in the field. ... The topics are well selected and cover most of the subjects related to nanoscale silicon devices. … includes plenty of references for anyone who wants to get deeper."―Tomás González, Applied Physics Department, University of Salamanca, Spain About the Author Shunri Oda received his BSc in physics in 1974 and MEng and DEng from the Tokyo Institute of Technology in 1976 and 1979, respectively. He is a professor in the Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology. He has authored more than 700 papers and edited Silicon Nanoelectronics (2005) for CRC Press. Professor Oda is a fellow of the Institute of Electrical and Electronics Engineers (IEEE) an