Woodhead Publishing Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices (Woodhead Publishing Series in Electronic and Optical Materials)

Product Description Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Review Summarizes new information on HfO2, an emerging ferroelectric material, compares it to other materials, and considers its implementation in semiconductor devices From the Back Cover Ferroelectricity in Doped Hafnium Oxide Ferroelectricity in Doped Hafnium Oxide covers all aspects related to the structural and electrical properties of semiconductor devices, and the implementation of ferroelectric HfO2- and ZrO2-based thin films into these devices, including a comparison to standard ferroelectric materials. Ferroelectric and field-induced ferroelectric properties are considered promising for various applications, including non-volatile memories, ferroelectric field-effect-transistors, energy storage and harvesting, and solid-state cooling. Fundamentals of ferro-, pyro-, and piezoelectric properties, deposition processes, and the impact of dopants on ferroelectric properties are discussed extensively for HfO2, the first fluorite-structure type ferroelectric material. All aspects of HfO2 as it applies to its ferroelectric properties are reviewed, including phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. The modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials are covered. A summary of HfO2-based devices is also included. Ferroelectricity in Doped Hafnium Oxide will be interesting to a broad audience ranging from those seeking an understanding of the basic material properties of hafnium oxide to those interested in implementation of HfO2 in novel, highly scaled memory and steep slope devices. New entrants to the field as well as experts are considering the problem of conventional ferroelectrics when it comes to downscaling semiconductor devices. This book provides the perspective of an emerging ferroelectric material that may circumvent the common issues of conventional ferroelectrics and improve device performance. It will provide not only the latest results on a potential solution, but also a comparison between emerging and standard materials, which allows for a better understanding of conventional ferroelectrics. Features of this book Explores all aspects of the structural and electrical properties of HfO2, including processes, modeling, and implementation into semiconductor devices. Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs, and more. Provides a comparison of emerging ferroelectric to conventional ferroelectric materials, with insights into the problems of downscaling that conventional ferroelectrics encounter. About the Author Dr. Uwe Schroeder has been in a Deputy Scientific Director position at Namlab since 2009. His main research focuses include material properties of ferroelectric hafnium oxide and the integration of the material into future dev